savantic semiconductor product specification silicon npn power transistors 2SC3092 description with to-3 package high breakdown voltage fast switching speed. wide area of safe operation applications 500v/7a switching regulator applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(t c =25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 800 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 7 v i c collector current 7 a i cp collector current-peak pw . 300s, duty cycle . 10% 14 a i b base current 3 a p c collector power dissipation t c =25 90 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3092 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ; r be = @ 500 v v (br)cbo collector-base breakdown voltage i c =1ma ; i e =0 800 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 7 v v ce (sat) collector-emitter saturation voltage i c =3a; i b =0.6a 1.0 v v be (sat) base-emitter saturation voltage i c =3a; i b =0.6a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =0.6a ; v ce =5v 15 50 h fe-2 dc current gain i c =3a ; v ce =5v 8 c ob output capacitance i e =0 ; v cb =10v, f=1mhz 80 pf f t transition frequency i c =0.6 a ; v ce =10v 18 mhz switching times t on turn-on time 0.5 s t s storage time 3.0 s t f fall time i c =4a; i b1 =0.8a;i b2 =-1.6a v cc =200v ,r l =50 f 0.3 s h fe-1 classifications l m n 15-30 20-40 30-50
savantic semiconductor product specification 3 silicon npn power transistors 2SC3092 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm)
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